封装原装VBZE50N06效应
封装原装VBZE80P03效应
VBZE42864010
VBZE10N20正品原装
VBZE10N20原厂正品原装
半导体现货VBZE80N06效应
VBZE50N04效应25240V
VBZE12N06效应25260V
半导体现货VBZE40N03效应
VBZE40N03效应21.8252
VBZE60N02效应100A252
半导体现货VBZE20N20效应
正品原装VBZE45N03252
VBZE40N06效应VBsemiMOS
VBZE30N06效应VBsemiMOS
VBZE80N06效应VBsemi100A
VBZE50N03效应VBsemiMOS
VBZE12P10效应VBsemi100V
VBZE40P03效应VBsemiMOS
VBZE50P03效应VBsemiMOS
VBZE100P03效应VBsemi100A
VBZE20P06效应VBsemiMOS
VBZE45N03效应VBsemiMOS
VBZE60N02效应VBsemiMOS
VBZE50P04效应VBsemiMOS
VBMBVBZEZXMS6002
VBZE20N10效应VBsemi100V
VBZE75N03效应VBsemi100A
VBZE30N02效应VBsemiMOS
VBZE06N03效应VBsemiMOS
效应VBZE2810VBsemi110A
VBZE50P06效应VBsemiMOS
效应VBZE5N20VBsemi200V
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